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IRF540NPBF
Power MOSFET, HEXFET, N Channel, 100 V, 33 A, 44 mohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF540NPBFCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Newark Part No. | 63J7319 |
| Product Range | HEXFET Series |
| Also Known As | SP001561906 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | $2.530 |
| 10+ | $1.670 |
| 100+ | $1.160 |
| 500+ | $0.945 |
| 1000+ | $0.927 |
| 2500+ | $0.907 |
| 10000+ | $0.889 |
Price for:Each
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Multiple: 1
$2.53
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Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF540NPBFCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Newark Part No. | 63J7319 |
| Product Range | HEXFET Series |
| Also Known As | SP001561906 |
| Technical Datasheet | |
| Transistor Polarity | N Channel |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 100V |
| Continuous Drain Current Id | 33A |
| Drain Source On State Resistance | 0.044ohm |
| On Resistance Rds(on) | 0.044ohm |
| Transistor Case Style | TO-220AB |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 130mW |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 130W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | HEXFET Series |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The IRF540NPBF is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage Vds is 100V
- Gate to source voltage is ±20V
- On resistance Rds(on) of 44mohm at Vgs of 10V
- Power dissipation Pd of 130W at 25°C
- Continuous drain current Id of 33A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
Technical Specifications
| Transistor Polarity | N Channel |
|---|---|
| Drain Source Voltage Vds | 100V |
| Drain Source On State Resistance | 0.044ohm |
| Transistor Case Style | TO-220AB |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4V |
| No. of Pins | 3Pins |
| Product Range | HEXFET Series |
| MSL | - |
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 33A |
| On Resistance Rds(on) | 0.044ohm |
| Transistor Mounting | Through Hole |
| Power Dissipation Pd | 130mW |
| Power Dissipation | 130W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (3)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |