IRF7105TRPBF
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 3.5 A, 3.5 A, 0.083 ohm
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF7105TRPBFCopy |
| Manufacturer Standard Lead Time | 18 weeks |
| Newark Part No. | Full Reel86AK5367 Re-Reel42Y0395RL Cut Tape42Y0395 |
| Your Part Number | |
| Technical Datasheet |
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.270 | $1.27 |
| Total Price | $1.27 | ||
| Quantity | Price |
|---|---|
| 1+ | $1.270 |
| 50+ | $0.650 |
| 100+ | $0.589 |
| 250+ | $0.536 |
| 500+ | $0.482 |
| 1000+ | $0.472 |
| 2500+ | $0.462 |
| 5000+ | $0.452 |
| Quantity | Price |
|---|---|
| 4000+ | $0.400 |
| 8000+ | $0.382 |
| 12000+ | $0.364 |
| 20000+ | $0.357 |
| 40000+ | $0.350 |
| 100000+ | $0.342 |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF7105TRPBFCopy |
| Manufacturer Standard Lead Time | 18 weeks |
| Newark Part No. | Full Reel86AK5367 Re-Reel42Y0395RL Cut Tape42Y0395 |
| Technical Datasheet | |
| Channel Type | Complementary N and P Channel |
| Continuous Drain Current Id | 3.5A |
| Drain Source Voltage Vds N Channel | 25V |
| Drain Source Voltage Vds P Channel | 25V |
| Drain Source Voltage Vds | 25V |
| Continuous Drain Current Id N Channel | 3.5A |
| Continuous Drain Current Id P Channel | 3.5A |
| Drain Source On State Resistance N Channel | 0.083ohm |
| Drain Source On State Resistance P Channel | 0.083ohm |
| Transistor Case Style | SOIC |
| No. of Pins | 8Pins |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | 2W |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The IRF7105TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Advanced process technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Technical Specifications
| Channel Type | Complementary N and P Channel |
|---|---|
| Drain Source Voltage Vds N Channel | 25V |
| Drain Source Voltage Vds | 25V |
| Continuous Drain Current Id P Channel | 3.5A |
| Drain Source On State Resistance P Channel | 0.083ohm |
| No. of Pins | 8Pins |
| Power Dissipation P Channel | 2W |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Continuous Drain Current Id | 3.5A |
|---|---|
| Drain Source Voltage Vds P Channel | 25V |
| Continuous Drain Current Id N Channel | 3.5A |
| Drain Source On State Resistance N Channel | 0.083ohm |
| Transistor Case Style | SOIC |
| Power Dissipation N Channel | 2W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (2)
Associated Products
6 Products Found
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |