IRF7105TRPBF
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 3.5 A, 3.5 A, 0.083 ohm
| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 1,490 $ | 1,49 $ |
| Total Prix | 1,49 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 1,490 $ |
| 50+ | 0,758 $ |
| 100+ | 0,687 $ |
| 250+ | 0,624 $ |
| 500+ | 0,562 $ |
| 1000+ | 0,550 $ |
| 2500+ | 0,539 $ |
| 5000+ | 0,528 $ |
| Quantité | Prix |
|---|---|
| 4000+ | 0,463 $ |
| 12000+ | 0,454 $ |
| 20000+ | 0,445 $ |
Informations produit
Aperçu du produit
The IRF7105TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Advanced process technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Spécifications techniques
Complementary N and P Channel
25V
25V
3.5A
0.083ohm
8Pins
2W
-
MSL 1 - Unlimited
3.5A
25V
3.5A
0.083ohm
SOIC
2W
150°C
-
No SVHC (25-Jun-2025)
Documents techniques (2)
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit