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IRF7341GTRPBF
MOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF7341GTRPBFCopy |
| Manufacturer Standard Lead Time | 15 weeks |
| Newark Part No. | Full Reel86AK5375 Re-Reel49AC0327RL Cut Tape49AC0327 |
| Product Range | HEXFET Series |
| Your Part Number | |
| Technical Datasheet |
1,120 In Stock
4,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.950 | $2.95 |
| Total Price | $2.95 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.950 |
| 50+ | $1.430 |
| 100+ | $1.290 |
| 250+ | $1.160 |
| 500+ | $1.030 |
| 1000+ | $1.010 |
| 2500+ | $0.987 |
| 5000+ | $0.967 |
Full Reel
| Quantity | Price |
|---|---|
| 4000+ | $0.969 |
| 8000+ | $0.938 |
| 12000+ | $0.907 |
| 20000+ | $0.889 |
| 40000+ | $0.871 |
| 100000+ | $0.853 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF7341GTRPBFCopy |
| Manufacturer Standard Lead Time | 15 weeks |
| Newark Part No. | Full Reel86AK5375 Re-Reel49AC0327RL Cut Tape49AC0327 |
| Product Range | HEXFET Series |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 55V |
| Drain Source Voltage Vds N Channel | 55V |
| Drain Source Voltage Vds P Channel | 55V |
| Continuous Drain Current Id | 5.1A |
| Continuous Drain Current Id N Channel | 5.1A |
| Continuous Drain Current Id P Channel | 5.1A |
| Drain Source On State Resistance N Channel | 0.043ohm |
| Drain Source On State Resistance P Channel | 0.043ohm |
| Transistor Case Style | SOIC |
| No. of Pins | 8Pins |
| Power Dissipation N Channel | 1.7W |
| Power Dissipation P Channel | 1.7W |
| Operating Temperature Max | 175°C |
| Product Range | HEXFET Series |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
HEXFET® power MOSFET utilize the latest processing techniques to achieve extremely low on-resistance per silicon area.
- Advanced process technology
- Dual N-channel MOSFET
- Ultra-low on-resistance
- 175°C operating temperature
- Repetitive avalanche allowed up to Tjmax
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds N Channel | 55V |
| Continuous Drain Current Id | 5.1A |
| Continuous Drain Current Id P Channel | 5.1A |
| Drain Source On State Resistance P Channel | 0.043ohm |
| No. of Pins | 8Pins |
| Power Dissipation P Channel | 1.7W |
| Product Range | HEXFET Series |
| MSL | - |
| Drain Source Voltage Vds | 55V |
|---|---|
| Drain Source Voltage Vds P Channel | 55V |
| Continuous Drain Current Id N Channel | 5.1A |
| Drain Source On State Resistance N Channel | 0.043ohm |
| Transistor Case Style | SOIC |
| Power Dissipation N Channel | 1.7W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (1)
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |