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IRFB4229PBF
Power MOSFET, HEXFET®, N Channel, 250 V, 46 A, 0.046 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFB4229PBFCopy
Manufacturer Standard Lead Time28 weeks
Newark Part No.18M1487
Your Part Number
1,070 In Stock
1,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $6.850 |
| 10+ | $4.740 |
| 100+ | $3.540 |
| 500+ | $3.030 |
| 1000+ | $2.970 |
| 2500+ | $2.910 |
| 5000+ | $2.850 |
Price for:Each
Minimum: 1
Multiple: 1
$6.85
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFB4229PBFCopy
Manufacturer Standard Lead Time28 weeks
Newark Part No.18M1487
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id46A
On Resistance Rds(on)0.038ohm
Drain Source On State Resistance0.046ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd330W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRFB4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
- Advanced process technology
- Low Qg for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
Applications
Audio, Consumer Electronics, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
On Resistance Rds(on)
0.038ohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
330W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
46A
Drain Source On State Resistance
0.046ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
330W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability