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IRFB7434PBF
Power MOSFET, N Channel, 40 V, 195 A, 0.0016 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $1.180 |
| 10+ | $1.180 |
| 100+ | $1.180 |
| 500+ | $1.180 |
| 1000+ | $1.180 |
| 3000+ | $1.180 |
| 5000+ | $1.180 |
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Multiple: 1
$1.18
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFB7434PBF
Newark Part No.53W9268
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id195A
On Resistance Rds(on)0.00125ohm
Drain Source On State Resistance0.0016ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd294W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation294W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Alternatives for IRFB7434PBF
3 Products Found
Product Overview
The IRFB7434PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.00125ohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
294W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
195A
Drain Source On State Resistance
0.0016ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
294W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate