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| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLML2502PBFCopy |
| Manufacturer Standard Lead Time | 43 weeks |
| Newark Part No. | Re-Reel97K2351RL Cut Tape97K2351 |
| Your Part Number | |
| Technical Datasheet |
40 In Stock
35,662 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.627 | $0.63 |
| Total Price | $0.63 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.627 |
| 50+ | $0.482 |
| 100+ | $0.400 |
| 250+ | $0.336 |
| 500+ | $0.283 |
| 1000+ | $0.239 |
| 2500+ | $0.196 |
| 5000+ | $0.167 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLML2502PBFCopy |
| Manufacturer Standard Lead Time | 43 weeks |
| Newark Part No. | Re-Reel97K2351RL Cut Tape97K2351 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Transistor Polarity | N Channel |
| Drain Source Voltage Vds | 20V |
| Continuous Drain Current Id | 4.2A |
| On Resistance Rds(on) | 0.045ohm |
| Drain Source On State Resistance | 0.045ohm |
| Transistor Case Style | SOT-23 |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 1.25W |
| Rds(on) Test Voltage | 4.5V |
| Gate Source Threshold Voltage Max | 1.2V |
| Power Dissipation | 1.25W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The IRLML2502PBF is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage (Vds) of 20V
- Gate to source voltage of ±12V
- On resistance Rds(on) of 35mohm at Vgs 4.5V
- Power dissipation Pd of 1.25W at 25°C
- Continuous drain current Id of 4.2A at vgs 4.5V and 25°C
- Operating junction temperature range from -55°C to 150°C
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 20V |
| On Resistance Rds(on) | 0.045ohm |
| Transistor Case Style | SOT-23 |
| Power Dissipation Pd | 1.25W |
| Gate Source Threshold Voltage Max | 1.2V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
| Transistor Polarity | N Channel |
|---|---|
| Continuous Drain Current Id | 4.2A |
| Drain Source On State Resistance | 0.045ohm |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 4.5V |
| Power Dissipation | 1.25W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (1)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Product traceability |
