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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFK140N30P
Newark Part No.58M7606
Technical Datasheet
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25+ | $21.850 |
50+ | $21.160 |
100+ | $20.760 |
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFK140N30P
Newark Part No.58M7606
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id140A
Drain Source On State Resistance0.024ohm
On Resistance Rds(on)0.024ohm
Transistor Case StyleTO-264
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd1.04kW
Gate Source Threshold Voltage Max5V
Power Dissipation1.04kW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFK140N30P is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- Avalanche rating
- Low Qg
- Easy to mount
- Space saving
- Low package inductance
Applications
Power Management, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
140A
On Resistance Rds(on)
0.024ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
1.04kW
Power Dissipation
1.04kW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.024ohm
Transistor Case Style
TO-264
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability