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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN230N10
Newark Part No.69C1144
Technical Datasheet
No Longer Available
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN230N10
Newark Part No.69C1144
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id230A
Drain Source Voltage Vds100V
On Resistance Rds(on)0.006ohm
Drain Source On State Resistance0.006ohm
Transistor Case StyleSOT-227B
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor MountingModule
Power Dissipation700W
Power Dissipation Pd700W
Operating Temperature Max150°C
No. of Pins4Pins
Qualification-
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2020)
Product Overview
The IXFN230N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- MiniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Avalanche rating
- Guaranteed FBSOA
- Low package inductance
- Easy to mount
- Space saving
Applications
Power Management, Lighting
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
230A
On Resistance Rds(on)
0.006ohm
Transistor Case Style
SOT-227B
Gate Source Threshold Voltage Max
4V
Power Dissipation
700W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.006ohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Power Dissipation Pd
700W
No. of Pins
4Pins
Product Range
-
SVHC
No SVHC (25-Jun-2020)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2020)
Download Product Compliance Certificate
Product Compliance Certificate