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IXFN230N10
Bipolar (BJT) Single Transistor, N Channel, 230 A, 100 V, 0.006 ohm, 10 V, 4 V
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Modèle arrêté
Informations produit
FabricantIXYS SEMICONDUCTOR
Réf. FabricantIXFN230N10Copie
Code Commande69C1144
Fiche technique
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id230A
Drain Source Voltage Vds100V
On Resistance Rds(on)0.006ohm
Drain Source On State Resistance6000µohm
Rds(on) Test Voltage10V
Transistor Case StyleSOT-227B
Transistor MountingModule
Gate Source Threshold Voltage Max4V
Power Dissipation Pd700W
Power Dissipation700W
Operating Temperature Max150°C
No. of Pins4Pins
Qualification-
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2020)
Aperçu du produit
The IXFN230N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- MiniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Avalanche rating
- Guaranteed FBSOA
- Low package inductance
- Easy to mount
- Space saving
Applications
Power Management, Lighting
Spécifications techniques
Channel Type
N Channel
Continuous Drain Current Id
230A
On Resistance Rds(on)
0.006ohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Power Dissipation Pd
700W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6000µohm
Transistor Case Style
SOT-227B
Gate Source Threshold Voltage Max
4V
Power Dissipation
700W
No. of Pins
4Pins
Product Range
-
SVHC
No SVHC (25-Jun-2020)
Documents techniques (2)
Législation et Questions environnementales
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (25-Jun-2020)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit