IXFN360N15T2
Bipolar (BJT) Single Transistor, N Channel, 310 A, 150 V, 0.004 ohm, 10 V, 5 V
| Manufacturer | LITTELFUSE |
|---|---|
| Manufacturer Part No | IXFN360N15T2Copy |
| Manufacturer Standard Lead Time | 25 weeks |
| Newark Part No. | 54AK7027 |
| Product Range | GigaMOS TrenchT2 HiPERFET Series |
| Your Part Number | |
| Technical Datasheet |
25 more incoming. You can reserve stock now
| Quantity | Price |
|---|---|
| 1+ | $80.040 |
| 5+ | $73.540 |
| 10+ | $67.030 |
| 25+ | $65.690 |
| 50+ | $64.340 |
| 100+ | $63.010 |
Product Information
| Manufacturer | LITTELFUSE |
|---|---|
| Manufacturer Part No | IXFN360N15T2Copy |
| Manufacturer Standard Lead Time | 25 weeks |
| Newark Part No. | 54AK7027 |
| Product Range | GigaMOS TrenchT2 HiPERFET Series |
| Technical Datasheet | |
| Channel Type | N Channel |
| Continuous Drain Current Id | 310A |
| Drain Source Voltage Vds | 150V |
| Drain Source On State Resistance | 0.004ohm |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation | 1070W |
| Operating Temperature Max | 175°C |
| Product Range | GigaMOS TrenchT2 HiPERFET Series |
| SVHC | To Be Advised |
Product Overview
IXFN360N15T2 is a DiscMSFT, GigaMOSTM TrenchT2, HiperFET™ power MOSFET. The device promotes device consolidation through the reduction or elimination of multiple paralleled lower current-rated MOSFET devices in high-power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon overall system simplicity, reliability, and cost. Applications include switch-mode and resonant-mode power supplies, DC-DC converters, battery chargers, synchronous rectification, uninterrupted power supplies, AC motor drives, DC choppers, and high-speed power switching applications.
- N-channel enhancement mode, avalanche rated, fast intrinsic diode
- Eliminates multiple paralleled lower current rated MOSFET devices
- Provides the ability to control more power within a smaller footprint
- Improves overall system reliability and cost
- Low RDS(ON) and gate charge (Qg), avalanches capabilities
- Incorporates Littelfuse HiPerFET™ technology for fast power switching performance
- International standard package, miniBLOC, with aluminum nitride isolation
- 150V drain source voltage and 5V gate source threshold voltage max
- 10V Rds(on) test voltage, 310A continuous drain current Id
- 2500V isolation voltage, 1070W power dissipation
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 150V |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 1070W |
| Product Range | GigaMOS TrenchT2 HiPERFET Series |
| Continuous Drain Current Id | 310A |
|---|---|
| Drain Source On State Resistance | 0.004ohm |
| Gate Source Threshold Voltage Max | 5V |
| Operating Temperature Max | 175°C |
| SVHC | To Be Advised |
Technical Docs (1)
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | To Be Advised |
| Download Product Compliance Certificate | Product Compliance Certificate |