IXFN360N15T2
Bipolar (BJT) Single Transistor, N Channel, 310 A, 150 V, 0.004 ohm, 10 V, 5 V
| Fabricant | LITTELFUSE |
|---|---|
| Réf. Fabricant | IXFN360N15T2Copie |
| Délai d’approvisionnement standard du fabricant | 25 semaines |
| Code Commande | 54AK7027 |
| Gamme de produit | GigaMOS TrenchT2 HiPERFET Series |
| Votre numéro de pièce | |
| Fiche technique |
| Quantité | Prix |
|---|---|
| 1+ | 80,040 $ |
| 5+ | 73,540 $ |
| 10+ | 67,030 $ |
| 25+ | 65,690 $ |
| 50+ | 64,340 $ |
| 100+ | 63,010 $ |
Informations produit
| Fabricant | LITTELFUSE |
|---|---|
| Réf. Fabricant | IXFN360N15T2Copie |
| Délai d’approvisionnement standard du fabricant | 25 semaines |
| Code Commande | 54AK7027 |
| Gamme de produit | GigaMOS TrenchT2 HiPERFET Series |
| Fiche technique | |
| Channel Type | N Channel |
| Continuous Drain Current Id | 310A |
| Drain Source Voltage Vds | 150V |
| Drain Source On State Resistance | 0.004ohm |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation | 1070W |
| Operating Temperature Max | 175°C |
| Product Range | GigaMOS TrenchT2 HiPERFET Series |
| SVHC | To Be Advised |
Aperçu du produit
IXFN360N15T2 is a DiscMSFT, GigaMOSTM TrenchT2, HiperFET™ power MOSFET. The device promotes device consolidation through the reduction or elimination of multiple paralleled lower current-rated MOSFET devices in high-power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon overall system simplicity, reliability, and cost. Applications include switch-mode and resonant-mode power supplies, DC-DC converters, battery chargers, synchronous rectification, uninterrupted power supplies, AC motor drives, DC choppers, and high-speed power switching applications.
- N-channel enhancement mode, avalanche rated, fast intrinsic diode
- Eliminates multiple paralleled lower current rated MOSFET devices
- Provides the ability to control more power within a smaller footprint
- Improves overall system reliability and cost
- Low RDS(ON) and gate charge (Qg), avalanches capabilities
- Incorporates Littelfuse HiPerFET™ technology for fast power switching performance
- International standard package, miniBLOC, with aluminum nitride isolation
- 150V drain source voltage and 5V gate source threshold voltage max
- 10V Rds(on) test voltage, 310A continuous drain current Id
- 2500V isolation voltage, 1070W power dissipation
Spécifications techniques
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 150V |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 1070W |
| Product Range | GigaMOS TrenchT2 HiPERFET Series |
| Continuous Drain Current Id | 310A |
|---|---|
| Drain Source On State Resistance | 0.004ohm |
| Gate Source Threshold Voltage Max | 5V |
| Operating Temperature Max | 175°C |
| SVHC | To Be Advised |
Documents techniques (1)
Législation et Questions environnementales
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| Conforme RoHS : | Oui RoHS |
| Conforme à la norme RoHS Phthalates: | Oui RoHS |
| SVHC : | To Be Advised |
| Télécharger le certificat de conformité du produit | Certificat de conformité du produit |