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IXFN360N15T2
Bipolar (BJT) Single Transistor, N Channel, 310 A, 150 V, 0.004 ohm, 10 V, 5 V
Image is for illustrative purposes only. Please refer to product description.
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN360N15T2
Newark Part No.54AK7027
Product RangeGigaMOS TrenchT2 HiPERFET Series
Technical Datasheet
79 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $66.290 |
| 5+ | $58.160 |
| 10+ | $55.330 |
| 25+ | $53.450 |
| 50+ | $52.490 |
| 100+ | $51.610 |
Price for:Each
Minimum: 1
Multiple: 1
$66.29
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN360N15T2
Newark Part No.54AK7027
Product RangeGigaMOS TrenchT2 HiPERFET Series
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id310A
Drain Source Voltage Vds150V
Drain Source On State Resistance0.004ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1070W
Operating Temperature Max175°C
Product RangeGigaMOS TrenchT2 HiPERFET Series
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
150V
Rds(on) Test Voltage
10V
Power Dissipation
1070W
Product Range
GigaMOS TrenchT2 HiPERFET Series
Continuous Drain Current Id
310A
Drain Source On State Resistance
0.004ohm
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate