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IXFN520N075T2
Bipolar (BJT) Single Transistor, N Channel, 480 A, 75 V, 0.0015 ohm, 10 V, 5 V
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ManufacturerLITTELFUSE
Manufacturer Part NoIXFN520N075T2
Newark Part No.03AH0765
Product RangeTrench T2 GigaMOS HiperFET Series
Technical Datasheet
270 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $47.030 |
| 5+ | $40.900 |
| 10+ | $34.780 |
| 25+ | $32.720 |
| 100+ | $30.680 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN520N075T2
Newark Part No.03AH0765
Product RangeTrench T2 GigaMOS HiperFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id480A
Drain Source Voltage Vds75V
Drain Source On State Resistance0.0015ohm
On Resistance Rds(on)0.0015ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation940W
Operating Temperature Max175°C
Power Dissipation Pd940W
Product RangeTrench T2 GigaMOS HiperFET Series
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
480A
Drain Source On State Resistance
0.0015ohm
Rds(on) Test Voltage
10V
Power Dissipation
940W
Power Dissipation Pd
940W
SVHC
To Be Advised
Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
0.0015ohm
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
Product Range
Trench T2 GigaMOS HiperFET Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability