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ManufacturerLITTELFUSE
Manufacturer Part NoIXFT170N25X3HV
Newark Part No.03AH0929
Product RangeX3-Class HiPerFET Series
Technical Datasheet
300 In Stock
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100+ | $18.940 |
500+ | $17.320 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFT170N25X3HV
Newark Part No.03AH0929
Product RangeX3-Class HiPerFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id170A
On Resistance Rds(on)0.0074ohm
Drain Source On State Resistance0.0074ohm
Transistor Case StyleTO-268HV
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation890W
Power Dissipation Pd890W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeX3-Class HiPerFET Series
MSL-
SVHCTo Be Advised
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic diode suitable for use in DC-DC converters, switch-mode and resonant-mode power supplies, AC and DC motor control, PFC circuits, robotics and servo controls application.
- X3-Class HiPerFET™ power MOSFET
- Low RDS(ON) and QG
- Low package inductance
- High power density
- Easy to mount
- Space savings
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
On Resistance Rds(on)
0.0074ohm
Transistor Case Style
TO-268HV
Rds(on) Test Voltage
10V
Power Dissipation
890W
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
170A
Drain Source On State Resistance
0.0074ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.5V
Power Dissipation Pd
890W
Operating Temperature Max
150°C
Product Range
X3-Class HiPerFET Series
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability