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IXTP3N100D2
Power MOSFET, N Channel, 1 kV, 3 A, 6 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $2.750 |
| 10+ | $2.750 |
| 25+ | $2.750 |
| 50+ | $2.750 |
| 100+ | $2.750 |
| 500+ | $2.750 |
| 1000+ | $2.750 |
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Minimum: 1
Multiple: 1
$2.75
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTP3N100D2
Newark Part No.03AH1672
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id3A
On Resistance Rds(on)6ohm
Drain Source On State Resistance6ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max-
Power Dissipation125W
Power Dissipation Pd125W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
6ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
0V
Power Dissipation
125W
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
3A
Drain Source On State Resistance
6ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
-
Power Dissipation Pd
125W
Operating Temperature Max
150°C
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability