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IXXN110N65C4H1
IGBT Module, Single, 210 A, 2.06 V, 750 W, 175 °C, SOT-227B
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ManufacturerLITTELFUSE
Manufacturer Part NoIXXN110N65C4H1Copy
Newark Part No.03AH1987
Product RangeXPT GenX4 Series
Your Part Number
100 In Stock
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| 100+ | $30.420 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXXN110N65C4H1Copy
Newark Part No.03AH1987
Product RangeXPT GenX4 Series
Technical Datasheet
DC Collector Current210A
IGBT ConfigurationSingle
Collector Emitter Saturation Voltage Vce(on)2.06V
Continuous Collector Current210A
Power Dissipation Pd750W
Collector Emitter Saturation Voltage2.06V
Collector Emitter Voltage V(br)ceo650V
Power Dissipation750W
Operating Temperature Max175°C
No. of Pins4Pins
Transistor Case StyleSOT-227B
IGBT TerminationTab
Collector Emitter Voltage Max650V
IGBT Technology-
Transistor MountingPanel
Product RangeXPT GenX4 Series
SVHCTo Be Advised
Technical Specifications
DC Collector Current
210A
Collector Emitter Saturation Voltage Vce(on)
2.06V
Power Dissipation Pd
750W
Collector Emitter Voltage V(br)ceo
650V
Operating Temperature Max
175°C
Transistor Case Style
SOT-227B
Collector Emitter Voltage Max
650V
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Single
Continuous Collector Current
210A
Collector Emitter Saturation Voltage
2.06V
Power Dissipation
750W
No. of Pins
4Pins
IGBT Termination
Tab
IGBT Technology
-
Product Range
XPT GenX4 Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability