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NX7002AK,215
Power MOSFET, N Channel, 60 V, 190 mA, 3 ohm, TO-236AB, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.177 |
| 10+ | $0.167 |
| 100+ | $0.066 |
| 500+ | $0.056 |
| 1000+ | $0.046 |
| 2500+ | $0.041 |
| 12000+ | $0.035 |
| 27000+ | $0.032 |
Price for:Each
Minimum: 5
Multiple: 5
$0.88
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNX7002AK,215
Newark Part No.43W6129
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id190mA
On Resistance Rds(on)3ohm
Drain Source On State Resistance3ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Power Dissipation Pd265mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation265mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Very Fast Switching
- ESD Protection Upto 1.5kV
Applications
Audio, Power Management, Signal Processing
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
190mA
Drain Source On State Resistance
3ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
265mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
On Resistance Rds(on)
3ohm
Transistor Case Style
TO-236AB
Power Dissipation Pd
265mW
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability