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NTE2383
Power MOSFET, P Channel, 100 V, 10.5 A, 0.3 ohm, TO-220, Through Hole
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Product Information
ManufacturerNTE ELECTRONICS
Manufacturer Part NoNTE2383Copy
Newark Part No.14T4215
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id10.5A
Drain Source On State Resistance0.3ohm
On Resistance Rds(on)0.3ohm
Transistor MountingThrough Hole
Power Dissipation Pd75W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Transistor Case StyleTO-220
Power Dissipation75W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (16-Jul-2019)
Product Overview
The NTE2383 is a -100V P-channel Enhancement Mode MOS Power FET designed for high voltage and high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
- Lower RDS (on)
- Improved inductive ruggedness
- Fast switching times
- Rugged polysilicon gate cell structure
- Lower input capacitance
- Extended safe operating area
- Improved high temperature reliability
Applications
Industrial
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.3ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
10.5A
On Resistance Rds(on)
0.3ohm
Power Dissipation Pd
75W
Gate Source Threshold Voltage Max
2V
Power Dissipation
75W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (16-Jul-2019)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jul-2019)
Download Product Compliance Certificate
Product Compliance Certificate