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Product Information
ManufacturerONSEMI
Manufacturer Part No1N5822G
Newark Part No.42K2952
Technical Datasheet
Repetitive Peak Reverse Voltage40V
Average Forward Current3A
Diode ConfigurationSingle
Diode Case StyleDO-201AD
No. of Pins2Pins
Forward Voltage Max525mV
Forward Surge Current80A
Operating Temperature Max125°C
Diode MountingThrough Hole
Product Range-
Qualification-
SVHCLead
Product Overview
The 1N5822G is a 2-pin 40V general purpose Schottky Barrier Rectifier features an epitaxial construction with oxide passivation and metal overlap contact. The Schottky rectifier employs the Schottky barrier principle in a large area metal-to-silicon power diode. It has state-of-the-art geometry. It is ideally suited for use as rectifier in low-voltage, high-frequency inverters, freewheeling diodes and polarity protection diodes.
- Extremely low vF
- Low power loss/high efficiency
- Low stored charge, majority carrier conduction
- Cathode indicated by polarity band
Applications
Industrial, Automation & Process Control, Signal Processing
Technical Specifications
Repetitive Peak Reverse Voltage
40V
Diode Configuration
Single
No. of Pins
2Pins
Forward Surge Current
80A
Diode Mounting
Through Hole
Qualification
-
Average Forward Current
3A
Diode Case Style
DO-201AD
Forward Voltage Max
525mV
Operating Temperature Max
125°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Alternatives for 1N5822G
2 Products Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability