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FCD5N60TM

Name: ONSEMI FCD5N60TM
Brand: ONSEMI
SKU: 34M6098
Availability: InStock

Power MOSFET, N Channel, 650 V, 4.6 A, 0.95 ohm, TO-252 (DPAK), Surface Mount

Date/Lot Code

Image is for illustrative purposes only. Please refer to product description.

ManufacturerONSEMI

Manufacturer Part NoFCD5N60TM

Newark Part No.34M6098

Technical Datasheet

Data Sheet

See all Technical Docs

Packaging Options

Cut Tape

Re-Reel

Full Reel

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Quantity	Price
1+	$2.760
10+	$2.190
25+	$2.060
50+	$1.950
100+	$1.840
250+	$1.740
500+	$1.640
1000+	$1.630

Price for:Each (Supplied on Cut Tape)

Minimum: 1

Multiple: 1

$2.76

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Product Information

ManufacturerONSEMI

Manufacturer Part NoFCD5N60TM

Newark Part No.34M6098

Technical Datasheet

Data Sheet

Channel TypeN Channel

Drain Source Voltage Vds650V

Continuous Drain Current Id4.6A

Drain Source On State Resistance0.95ohm

On Resistance Rds(on)0.95ohm

Transistor Case StyleTO-252 (DPAK)

Transistor MountingSurface Mount

Power Dissipation Pd54W

Rds(on) Test Voltage10V

Gate Source Threshold Voltage Max5V

Power Dissipation54W

No. of Pins3Pins

Operating Temperature Max150°C

Product Range-

Qualification-

MSLMSL 1 - Unlimited

SVHCLead (27-Jun-2024)

Product Overview

The FCD5N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Ultra low gate charge (Qg = 16nC)
Low effective output capacitance (Coss.eff = 32pF)
100% avalanche tested

Applications

Industrial, Power Management, Communications & Networking, Lighting, Alternative Energy, Imaging, Video & Vision

Technical Specifications

Channel Type

N Channel

Continuous Drain Current Id

4.6A

On Resistance Rds(on)

0.95ohm

Transistor Mounting

Surface Mount

Rds(on) Test Voltage

10V

Power Dissipation

54W

Operating Temperature Max

150°C

Qualification

SVHC

Lead (27-Jun-2024)

Drain Source Voltage Vds

650V

Drain Source On State Resistance

0.95ohm

Transistor Case Style

TO-252 (DPAK)

Power Dissipation Pd

54W

Gate Source Threshold Voltage Max

No. of Pins

3Pins

Product Range

MSL

MSL 1 - Unlimited

Technical Docs (2)

Product Change Notice EN

Technical Data Sheet EN

Alternatives for FCD5N60TM

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Associated Products

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Legislation and Environmental

US ECCN:EAR99

EU ECCN:Unknown

RoHS Compliant:Y-Ex

RoHS

RoHS Phthalates Compliant:Yes