FCD5N60TM
Power MOSFET, N Channel, 650 V, 4.6 A, 0.95 ohm, TO-252 (DPAK), Surface Mount
| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 3,860 $ | 3,86 $ |
| Total Prix | 3,86 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 3,860 $ |
| 50+ | 2,360 $ |
| 100+ | 2,000 $ |
| 250+ | 1,890 $ |
| 500+ | 1,780 $ |
| 1000+ | 1,680 $ |
| 2500+ | 1,490 $ |
| 5000+ | 1,460 $ |
Informations produit
Aperçu du produit
The FCD5N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 16nC)
- Low effective output capacitance (Coss.eff = 32pF)
- 100% avalanche tested
Applications
Industrial, Power Management, Communications & Networking, Lighting, Alternative Energy, Imaging, Video & Vision
Spécifications techniques
N Channel
4.6A
0.95ohm
Surface Mount
54W
54W
150°C
-
Lead (25-Jun-2025)
650V
0.95ohm
TO-252 (DPAK)
10V
5V
3Pins
-
MSL 1 - Unlimited
Documents techniques (2)
Produits de remplacement pour FCD5N60TM
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Produits associés
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit