Print Page
FCH47N60-F133
Power MOSFET, N Channel, 600 V, 47 A, 58 mohm, TO-247AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFCH47N60-F133Copy
Manufacturer Standard Lead Time22 weeks
Newark Part No.88T3232
Your Part Number
1,189 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $22.570 |
| 10+ | $19.850 |
| 25+ | $17.120 |
| 50+ | $14.400 |
| 100+ | $13.610 |
| 250+ | $12.940 |
| 500+ | $12.680 |
Price for:Each
Minimum: 1
Multiple: 1
$22.57
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFCH47N60-F133Copy
Manufacturer Standard Lead Time22 weeks
Newark Part No.88T3232
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id47A
On Resistance Rds(on)0.058ohm
Drain Source On State Resistance58mohm
Transistor Case StyleTO-247AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd417W
Gate Source Threshold Voltage Max3V
Power Dissipation417W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The FCH47N60_F133 is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 210nC)
- Low effective output capacitance (Coss.eff = 420pF)
- 100% avalanche tested
Applications
Industrial, Power Management, Communications & Networking, Alternative Energy
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
47A
Drain Source On State Resistance
58mohm
Transistor Mounting
Through Hole
Power Dissipation Pd
417W
Power Dissipation
417W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.058ohm
Transistor Case Style
TO-247AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate