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FDB52N20TM
Power MOSFET, N Channel, 200 V, 52 A, 0.049 ohm, TO-263AB, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDB52N20TMCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Full Reel86K1324
Cut Tape67P3452
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 800 | $2.980 | $2,384.00 |
| Total Price | $2,384.00 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 800+ | $2.980 |
| 1600+ | $2.930 |
| 2400+ | $2.860 |
| 4000+ | $2.800 |
| 8000+ | $2.740 |
| 20000+ | $2.690 |
| 40000+ | $2.620 |
| 80000+ | $2.560 |
Full Reel
| Quantity | Price |
|---|---|
| 800+ | $2.450 |
| 2400+ | $2.370 |
| 4000+ | $2.320 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDB52N20TMCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Full Reel86K1324
Cut Tape67P3452
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id52A
On Resistance Rds(on)0.041ohm
Drain Source On State Resistance0.049ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd357W
Gate Source Threshold Voltage Max5V
Transistor Case StyleTO-263AB
Power Dissipation357W
No. of Pins2Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead (23-Jan-2024)
Product Overview
The FDB52N20TM is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power and ATX.
- 100% avalanche tested
- 49nC typical low gate charge
- 66pF typical low Crss
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.041ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
357W
Transistor Case Style
TO-263AB
No. of Pins
2Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
52A
Drain Source On State Resistance
0.049ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
Power Dissipation
357W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead (23-Jan-2024)
Technical Docs (2)
Alternatives for FDB52N20TM
2 Products Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate