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FDC5614P
Power MOSFET, P Channel, 60 V, 3 A, 0.082 ohm, SuperSOT, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.364 |
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| 50+ | $0.364 |
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| 250+ | $0.334 |
| 500+ | $0.333 |
| 1000+ | $0.308 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC5614P
Newark Part No.34C0107
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id3A
On Resistance Rds(on)0.082ohm
Drain Source On State Resistance0.082ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.6W
Rds(on) Test Voltage10V
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max1.6V
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC5614P is a -60V P-channel logic level PowerTrench® MOSFET uses high voltage PowerTrench process. It has been optimized for power management applications. This product is general usage and suitable for many different applications.
- Fast switching speed
- High performance trench technology for extremely low RDS (ON)
- ±20V gate source voltage (VGSS)
- 78°C/W Thermal resistance, junction to ambient
- 30°C/W thermal resistance, junction to case
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.082ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.6V
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
3A
Drain Source On State Resistance
0.082ohm
Power Dissipation Pd
1.6W
Transistor Case Style
SuperSOT
Power Dissipation
1.6W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
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