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ManufacturerONSEMI
Manufacturer Part NoFDC6306P
Newark Part No.38C7094
Product RangePowerTrench Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
Quantity | Price |
---|---|
2500+ | $0.321 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$963.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6306P
Newark Part No.38C7094
Product RangePowerTrench Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id1.9A
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel1.9A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.17ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Product RangePowerTrench Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC6306P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1.9A
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
1.9A
Drain Source On State Resistance P Channel
0.17ohm
No. of Pins
6Pins
Power Dissipation P Channel
960mW
Product Range
PowerTrench Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SuperSOT
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for FDC6306P
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate