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FDC6401N
Dual MOSFET, N Channel, 20 V, 3 A, 0.07 ohm
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDC6401NCopy |
| Manufacturer Standard Lead Time | 21 weeks |
| Newark Part No. | Full Reel67R2039 Re-Reel82C2449RL Cut Tape82C2449 |
| Your Part Number | |
| Technical Datasheet |
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.770 | $1.77 |
| Total Price | $1.77 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.770 |
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| 100+ | $0.796 |
| 250+ | $0.720 |
| 500+ | $0.642 |
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| 2500+ | $0.617 |
| 5000+ | $0.603 |
Full Reel
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| 15000+ | $0.454 |
| 30000+ | $0.444 |
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Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDC6401NCopy |
| Manufacturer Standard Lead Time | 21 weeks |
| Newark Part No. | Full Reel67R2039 Re-Reel82C2449RL Cut Tape82C2449 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds N Channel | 20V |
| Continuous Drain Current Id | 3A |
| Drain Source Voltage Vds P Channel | - |
| Drain Source Voltage Vds | 20V |
| Continuous Drain Current Id N Channel | 3A |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance N Channel | 0.07ohm |
| Drain Source On State Resistance P Channel | - |
| Transistor Case Style | SuperSOT |
| No. of Pins | 6Pins |
| Power Dissipation N Channel | 960mW |
| Power Dissipation P Channel | - |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The FDC6401N is a dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed. The device is suitable for use with DC-to-DC converters and battery protected applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±12V Gate to source voltage
- 3A Continuous drain/output current
- 12A Pulsed drain/output current
Applications
Industrial, Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 3A |
| Drain Source Voltage Vds | 20V |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance P Channel | - |
| No. of Pins | 6Pins |
| Power Dissipation P Channel | - |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Drain Source Voltage Vds N Channel | 20V |
|---|---|
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id N Channel | 3A |
| Drain Source On State Resistance N Channel | 0.07ohm |
| Transistor Case Style | SuperSOT |
| Power Dissipation N Channel | 960mW |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (2)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Product traceability |