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FDG6303N
Dual MOSFET, N Channel, 25 V, 500 mA, 0.34 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDG6303NCopy
Newark Part No.
Re-Reel58K1450
Cut Tape58K1450
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 11 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 3000 | $0.249 | $747.00 |
| Total Price | $747.00 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.249 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG6303NCopy
Newark Part No.
Re-Reel58K1450
Cut Tape58K1450
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id500mA
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds25V
Continuous Drain Current Id N Channel500mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.34ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel300mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDG6303N is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <lt/>1.5V)
- Gate-source Zener for ESD ruggedness
- Compact industry standard surface-mount-package
- -0.5 to 8V Gate to source voltage
- 0.5A Continuous drain/output current
- 1.5A Pulsed drain/output current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds
25V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
500mA
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
500mA
Drain Source On State Resistance N Channel
0.34ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability