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| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDN340PCopy |
| Manufacturer Standard Lead Time | 30 weeks |
| Newark Part No. | Full Reel67R2061 Re-Reel58K8841RL Cut Tape58K8841 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.945 | $0.94 |
| Total Price | $0.94 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.945 |
| 50+ | $0.423 |
| 100+ | $0.371 |
| 250+ | $0.342 |
| 500+ | $0.259 |
| 1000+ | $0.253 |
| 2500+ | $0.249 |
| 5000+ | $0.243 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.230 |
| 6000+ | $0.217 |
| 9000+ | $0.189 |
| 15000+ | $0.169 |
| 30000+ | $0.155 |
| 75000+ | $0.141 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDN340PCopy |
| Manufacturer Standard Lead Time | 30 weeks |
| Newark Part No. | Full Reel67R2061 Re-Reel58K8841RL Cut Tape58K8841 |
| Technical Datasheet | |
| Channel Type | P Channel |
| Transistor Polarity | P Channel |
| Drain Source Voltage Vds | 20V |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 70mohm |
| On Resistance Rds(on) | 0.06ohm |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 500mW |
| Rds(on) Test Voltage | 4.5V |
| Gate Source Threshold Voltage Max | 800mV |
| Transistor Case Style | SuperSOT |
| Power Dissipation | 500mW |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The FDN340P is -20V single P channel 2.5V specified powerTrench MOSFET in SOT-23 package. This MOSFET is produced using PowerTrench process to minimize on state resistance and yet maintain low gate charge for superior switching performance. Applicable at portable electronics, load switching, power management, battery charging circuits and DC to DC conversion.
- High performance trench technology for extremely low Rds(on)
- Low gate charge typically 7.2 nC
- Drain to source voltage (Vds) of -20V
- Gate to source voltage of ±8V
- Continuous drain current of -2A
- Power dissipation Pd of 500mW
- Operating junction temperature range from -55°C to 150°C
- On resistance Rds(on) of 82mohm at Vgs -2.5V
Technical Specifications
| Channel Type | P Channel |
|---|---|
| Drain Source Voltage Vds | 20V |
| Drain Source On State Resistance | 70mohm |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 4.5V |
| Transistor Case Style | SuperSOT |
| No. of Pins | 3Pins |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| Transistor Polarity | P Channel |
|---|---|
| Continuous Drain Current Id | 2A |
| On Resistance Rds(on) | 0.06ohm |
| Power Dissipation Pd | 500mW |
| Gate Source Threshold Voltage Max | 800mV |
| Power Dissipation | 500mW |
| Operating Temperature Max | 150°C |
| Product Range | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (2)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Product traceability |
