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FDN360P
Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SuperSOT, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDN360PCopy |
| Manufacturer Standard Lead Time | 17 weeks |
| Newark Part No. | Full Reel67R2064 Re-Reel58K1466RL Cut Tape58K1466 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.959 | $0.96 |
| Total Price | $0.96 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.959 |
| 50+ | $0.432 |
| 100+ | $0.381 |
| 250+ | $0.335 |
| 500+ | $0.288 |
| 1000+ | $0.282 |
| 2500+ | $0.277 |
| 5000+ | $0.271 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.256 |
| 6000+ | $0.241 |
| 9000+ | $0.210 |
| 15000+ | $0.188 |
| 30000+ | $0.172 |
| 75000+ | $0.158 |
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Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDN360PCopy |
| Manufacturer Standard Lead Time | 17 weeks |
| Newark Part No. | Full Reel67R2064 Re-Reel58K1466RL Cut Tape58K1466 |
| Technical Datasheet | |
| Channel Type | P Channel |
| Transistor Polarity | P Channel |
| Drain Source Voltage Vds | 30V |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 0.08ohm |
| On Resistance Rds(on) | 0.08ohm |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 500mW |
| Transistor Case Style | SuperSOT |
| Gate Source Threshold Voltage Max | 20V |
| Power Dissipation | 500mW |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited for low voltage and battery powered applications.
- High performance trench technology for extremely low Rds(ON)
- Low gate charge typically 6.2nC
- Drain to source voltage (Vds) of -30V
- Gate to source voltage of ±20V
- Continuous drain current (Id) of -2A at 25°C
- Power dissipation (Pd) of 500mW
- Low on state resistance of 100mohm at Vgs -4.5V
- Operating temperature range from -55°C to 150°C
Technical Specifications
| Channel Type | P Channel |
|---|---|
| Drain Source Voltage Vds | 30V |
| Drain Source On State Resistance | 0.08ohm |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 500mW |
| Gate Source Threshold Voltage Max | 20V |
| No. of Pins | 3Pins |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| Transistor Polarity | P Channel |
|---|---|
| Continuous Drain Current Id | 2A |
| On Resistance Rds(on) | 0.08ohm |
| Rds(on) Test Voltage | 10V |
| Transistor Case Style | SuperSOT |
| Power Dissipation | 500mW |
| Operating Temperature Max | 150°C |
| Product Range | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (2)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Product traceability |