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FDN5618P
Power MOSFET, P Channel, 60 V, 1.25 A, 0.17 ohm, SuperSOT, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDN5618P
Newark Part No.58K8844
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.25A
On Resistance Rds(on)0.17ohm
Drain Source On State Resistance0.17ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd500mW
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max1.6V
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDN5618P is a surface mount, 60V P channel logic level powerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited for DC-DC converters, load switch and power management applications.
- High performance trench technology for extremely low Rds(ON)
- Drain to source voltage (Vds) of -60V
- Gate to source voltage of ±20V
- Continuous drain current (Id) of -1.25A
- Power dissipation (pd) of 500mW
- Low on state resistance of 185mohm at Vgs -4.5V
- Operating junction temperature range from -55°C to 150°C
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.17ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
500mW
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
1.25A
Drain Source On State Resistance
0.17ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SuperSOT
Power Dissipation
500mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
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