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FQI50N06TU
Power MOSFET, N Channel, 60 V, 50 A, 0.018 ohm, I2PAK, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoFQI50N06TU
Newark Part No.82C4173
Product RangeQFET Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 101 week(s)
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQI50N06TU
Newark Part No.82C4173
Product RangeQFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id50A
On Resistance Rds(on)0.018ohm
Drain Source On State Resistance0.018ohm
Transistor Case StyleI2PAK
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation120W
Power Dissipation Pd120W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product RangeQFET Series
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.018ohm
Transistor Case Style
I2PAK
Rds(on) Test Voltage
10V
Power Dissipation
120W
No. of Pins
3Pins
Qualification
-
SVHC
Lead
Channel Type
N Channel
Continuous Drain Current Id
50A
Drain Source On State Resistance
0.018ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
120W
Operating Temperature Max
175°C
Product Range
QFET Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate