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Quantity | Price |
---|---|
1+ | $8.150 |
10+ | $7.520 |
25+ | $7.520 |
50+ | $7.520 |
100+ | $6.990 |
300+ | $6.110 |
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Multiple: 1
$8.15
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ11012G
Newark Part No.42K1309
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo60V
Collector Emitter Voltage Max60V
Transition Frequency-
Continuous Collector Current30A
Power Dissipation Pd200W
DC Collector Current30A
Power Dissipation200W
RF Transistor CaseTO-204AA
No. of Pins2Pins
DC Current Gain hFE1000hFE
Transistor Case StyleTO-204AA
Transistor MountingThrough Hole
Operating Temperature Max200°C
DC Current Gain hFE Min1000hFE
Product Range-
Qualification-
SVHCLead
Product Overview
The MJ11012G is a NPN bipolar power Darlington Transistor designed for use as output device in complementary general purpose amplifier applications.
- Complementary device
- Monolithic construction with built-in base emitter shunt resistors
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
60V
Continuous Collector Current
30A
DC Collector Current
30A
RF Transistor Case
TO-204AA
DC Current Gain hFE
1000hFE
Transistor Mounting
Through Hole
DC Current Gain hFE Min
1000hFE
Qualification
-
Collector Emitter Voltage V(br)ceo
60V
Transition Frequency
-
Power Dissipation Pd
200W
Power Dissipation
200W
No. of Pins
2Pins
Transistor Case Style
TO-204AA
Operating Temperature Max
200°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability