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MJ11033G
Darlington Transistor, Darlington, PNP, 120 V, 300 W, 50 A, TO-3, 2 Pins
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| Quantity | Price |
|---|---|
| 1+ | $15.990 |
| 10+ | $12.350 |
| 25+ | $12.250 |
| 50+ | $12.150 |
| 100+ | $10.710 |
| 300+ | $10.600 |
| 500+ | $10.480 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ11033G
Newark Part No.26K4508
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo120V
Collector Emitter Voltage Max120V
Transition Frequency-
Continuous Collector Current50A
Power Dissipation Pd300W
DC Collector Current50A
Power Dissipation300W
RF Transistor CaseTO-3
No. of Pins2Pins
DC Current Gain hFE18000hFE
Transistor Case StyleTO-3
Transistor MountingThrough Hole
Operating Temperature Max200°C
DC Current Gain hFE Min18000hFE
Product Range-
Qualification-
SVHCLead
Product Overview
The MJ11033G is a PNP Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built-in base-emitter shunt resistor.
- High DC current gain
- Diode protection to rated IC
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
120V
Continuous Collector Current
50A
DC Collector Current
50A
RF Transistor Case
TO-3
DC Current Gain hFE
18000hFE
Transistor Mounting
Through Hole
DC Current Gain hFE Min
18000hFE
Qualification
-
Collector Emitter Voltage V(br)ceo
120V
Transition Frequency
-
Power Dissipation Pd
300W
Power Dissipation
300W
No. of Pins
2Pins
Transistor Case Style
TO-3
Operating Temperature Max
200°C
Product Range
-
SVHC
Lead
Technical Docs (1)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability