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NDC7002N
Dual MOSFET, N Channel, 50 V, 510 mA, 2 ohm
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | NDC7002NCopy |
| Manufacturer Standard Lead Time | 21 weeks |
| Newark Part No. | Full Reel87X5918 Re-Reel79K5296RL Cut Tape79K5296 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.130 | $1.13 |
| Total Price | $1.13 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.130 |
| 50+ | $0.510 |
| 100+ | $0.449 |
| 250+ | $0.396 |
| 500+ | $0.342 |
| 1000+ | $0.335 |
| 2500+ | $0.328 |
| 5000+ | $0.321 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.344 |
| 6000+ | $0.339 |
| 9000+ | $0.318 |
| 15000+ | $0.302 |
| 30000+ | $0.287 |
| 75000+ | $0.277 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | NDC7002NCopy |
| Manufacturer Standard Lead Time | 21 weeks |
| Newark Part No. | Full Reel87X5918 Re-Reel79K5296RL Cut Tape79K5296 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds N Channel | 50V |
| Continuous Drain Current Id | 510mA |
| Drain Source Voltage Vds | 50V |
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id N Channel | 510mA |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance N Channel | 2ohm |
| Drain Source On State Resistance P Channel | - |
| Transistor Case Style | SuperSOT |
| No. of Pins | 6Pins |
| Power Dissipation N Channel | 700mW |
| Power Dissipation P Channel | - |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The NDC7002N is a dual N-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage applications requiring a low current high side switch.
- High saturation current
- High density cell design for low RDS (ON)
- Design using copper lead-frame for superior thermal and electrical capabilities
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 510mA |
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance P Channel | - |
| No. of Pins | 6Pins |
| Power Dissipation P Channel | - |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Drain Source Voltage Vds N Channel | 50V |
|---|---|
| Drain Source Voltage Vds | 50V |
| Continuous Drain Current Id N Channel | 510mA |
| Drain Source On State Resistance N Channel | 2ohm |
| Transistor Case Style | SuperSOT |
| Power Dissipation N Channel | 700mW |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (2)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |