Print Page
NDS9945
Dual MOSFET, N Channel, 60 V, 60 V, 3.5 A, 3.5 A, 0.076 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNDS9945Copy
Manufacturer Standard Lead Time34 weeks
Newark Part No.
Full Reel29X6827
Re-Reel03H3057RL
Cut Tape03H3057
Your Part Number
32,794 In Stock
Need more?
2794 US Stock delivery in 2-3 Business Days Order before 6pm EST Standard Shipping
15000 UK Stock available for delivery in 4-6 Business Days
Order before 6pm
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.370 | $3.37 |
| Total Price | $3.37 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.370 |
| 10+ | $1.870 |
| 25+ | $1.740 |
| 50+ | $1.620 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $1.870 |
| 3000+ | $1.810 |
| 6000+ | $1.690 |
| 12000+ | $1.550 |
| 18000+ | $1.510 |
| 30000+ | $1.490 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNDS9945Copy
Manufacturer Standard Lead Time34 weeks
Newark Part No.
Full Reel29X6827
Re-Reel03H3057RL
Cut Tape03H3057
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id3.5A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel3.5A
Continuous Drain Current Id P Channel3.5A
Drain Source On State Resistance N Channel0.076ohm
Drain Source On State Resistance P Channel0.076ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel1.6W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NDS9945 is a 60V Dual N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. It is particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- ±20V gate to source voltage
- 78°C/W Thermal resistance, junction to ambient
- 40°C/W thermal resistance, junction to case
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
3.5A
Drain Source On State Resistance P Channel
0.076ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.6W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
3.5A
Continuous Drain Current Id N Channel
3.5A
Drain Source On State Resistance N Channel
0.076ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for NDS9945
1 Product Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate