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NDS9945
Dual MOSFET, N Channel, 60 V, 60 V, 3.5 A, 3.5 A, 0.076 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNDS9945Copy
Newark Part No.
Re-Reel03H3057
Cut Tape03H3057
Your Part Number
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.891 | $0.89 |
| Total Price | $0.89 | ||
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| Quantity | Price |
|---|---|
| 1+ | $0.891 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNDS9945Copy
Newark Part No.
Re-Reel03H3057
Cut Tape03H3057
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id3.5A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel3.5A
Continuous Drain Current Id P Channel3.5A
Drain Source On State Resistance N Channel0.076ohm
Drain Source On State Resistance P Channel0.076ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel1.6W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NDS9945 is a 60V Dual N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. It is particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- ±20V gate to source voltage
- 78°C/W Thermal resistance, junction to ambient
- 40°C/W thermal resistance, junction to case
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
3.5A
Drain Source On State Resistance P Channel
0.076ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.6W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
3.5A
Continuous Drain Current Id N Channel
3.5A
Drain Source On State Resistance N Channel
0.076ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for NDS9945
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate