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NDT3055L
Power MOSFET, N Channel, 60 V, 4 A, 0.1 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | NDT3055LCopy |
| Manufacturer Standard Lead Time | 44 weeks |
| Newark Part No. | Full Reel23K8163 Re-Reel72K9001RL Cut Tape72K9001 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.530 | $2.53 |
| Total Price | $2.53 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.530 |
| 50+ | $1.200 |
| 100+ | $1.070 |
| 250+ | $0.959 |
| 500+ | $0.845 |
| 1000+ | $0.828 |
| 2500+ | $0.812 |
| 5000+ | $0.795 |
Full Reel
| Quantity | Price |
|---|---|
| 4000+ | $0.830 |
| 8000+ | $0.795 |
| 12000+ | $0.722 |
| 20000+ | $0.651 |
| 40000+ | $0.627 |
| 100000+ | $0.613 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | NDT3055LCopy |
| Manufacturer Standard Lead Time | 44 weeks |
| Newark Part No. | Full Reel23K8163 Re-Reel72K9001RL Cut Tape72K9001 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 60V |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.1ohm |
| Transistor Case Style | SOT-223 |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 1.6V |
| Power Dissipation | 3W |
| No. of Pins | 4Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The NDT3055L is a N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC converters, PWM motor controls and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- Low drive requirements allowing operation directly from logic drivers
Applications
Power Management, Motor Drive & Control, Automotive
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 4A |
| Transistor Case Style | SOT-223 |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 3W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 60V |
|---|---|
| Drain Source On State Resistance | 0.1ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 1.6V |
| No. of Pins | 4Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Product traceability |