NDT3055L
Power MOSFET, N Channel, 60 V, 4 A, 0.1 ohm, SOT-223, Surface Mount
| Fabricant | ONSEMI |
|---|---|
| Réf. Fabricant | NDT3055LCopie |
| Délai d’approvisionnement standard du fabricant | 44 semaines |
| Code Commande | Bobine complète23K8163 Mise en bobine72K9001RL Bandes découpées72K9001 |
| Votre numéro de pièce | |
| Fiche technique |
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| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 2,530 $ | 2,53 $ |
| Total Prix | 2,53 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 2,530 $ |
| 50+ | 1,200 $ |
| 100+ | 1,070 $ |
| 250+ | 0,959 $ |
| 500+ | 0,845 $ |
| 1000+ | 0,828 $ |
| 2500+ | 0,812 $ |
| 5000+ | 0,795 $ |
| Quantité | Prix |
|---|---|
| 4000+ | 0,830 $ |
| 8000+ | 0,795 $ |
| 12000+ | 0,722 $ |
| 20000+ | 0,651 $ |
| 40000+ | 0,627 $ |
| 100000+ | 0,613 $ |
Informations produit
| Fabricant | ONSEMI |
|---|---|
| Réf. Fabricant | NDT3055LCopie |
| Délai d’approvisionnement standard du fabricant | 44 semaines |
| Code Commande | Bobine complète23K8163 Mise en bobine72K9001RL Bandes découpées72K9001 |
| Fiche technique | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 60V |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.1ohm |
| Transistor Case Style | SOT-223 |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 1.6V |
| Power Dissipation | 3W |
| No. of Pins | 4Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Aperçu du produit
The NDT3055L is a N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC converters, PWM motor controls and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- Low drive requirements allowing operation directly from logic drivers
Applications
Power Management, Motor Drive & Control, Automotive
Spécifications techniques
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 4A |
| Transistor Case Style | SOT-223 |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 3W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 60V |
|---|---|
| Drain Source On State Resistance | 0.1ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 1.6V |
| No. of Pins | 4Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Documents techniques (2)
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Législation et Questions environnementales
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| Conforme RoHS : | Y-Ex RoHS |
| Conforme à la norme RoHS Phthalates: | Oui RoHS |
| SVHC : | No SVHC (25-Jun-2025) |
| Télécharger le certificat de conformité du produit | Certificat de conformité du produit |
| Traçabilité des produits |