Print Page
NTBG040N120M3S
Silicon Carbide MOSFET, N Channel, 51 A, 1.2 kV, 0.052 ohm, D2PAK-7L
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTBG040N120M3S
Newark Part No.57AK6406
Product RangeEliteSiC Series
Technical Datasheet
160 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $12.810 |
| 10+ | $9.470 |
| 25+ | $8.830 |
| 50+ | $8.190 |
| 100+ | $7.550 |
| 250+ | $7.410 |
| 500+ | $7.270 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$12.81
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG040N120M3S
Newark Part No.57AK6406
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module Configuration-
Channel TypeN Channel
Continuous Drain Current Id51A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.052ohm
Transistor Case StyleD2PAK-7L
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation329W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
-
Continuous Drain Current Id
51A
Drain Source On State Resistance
0.052ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
D2PAK-7L
Rds(on) Test Voltage
18V
Power Dissipation
329W
Product Range
EliteSiC Series
Technical Docs (2)
Alternatives for NTBG040N120M3S
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability