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NTBG070N120M3S
Silicon Carbide MOSFET, N Channel, 37 A, 1.2 kV, 0.091 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTBG070N120M3S
Newark Part No.80AK5049
Product RangeEliteSiC Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $13.820 |
| 10+ | $10.220 |
| 25+ | $9.640 |
| 50+ | $9.070 |
| 100+ | $8.480 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$13.82
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG070N120M3S
Newark Part No.80AK5049
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module Configuration-
Channel TypeN Channel
Continuous Drain Current Id37A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.091ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation252W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
-
Continuous Drain Current Id
37A
Drain Source On State Resistance
0.091ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
252W
Product Range
EliteSiC Series
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate