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Quantity | Price |
---|---|
1+ | $0.537 |
10+ | $0.378 |
25+ | $0.353 |
50+ | $0.330 |
100+ | $0.305 |
250+ | $0.294 |
500+ | $0.283 |
1000+ | $0.256 |
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Multiple: 1
$0.54
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTJS4151PT1G
Newark Part No.81Y7048
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.2A
Drain Source On State Resistance0.06ohm
On Resistance Rds(on)0.047ohm
Transistor Case StyleSOT-363
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1W
Gate Source Threshold Voltage Max400mV
Power Dissipation1W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for NTJS4151PT1G
2 Products Found
Product Overview
The NTJS4151PT1G is a P-channel single Trench Power MOSFET offers -20V drain source voltage and -3.3A continuous drain current. It is suitable for use as high side load switches, cell phones, computing, digital cameras, MP3s and PDAs.
- Leading Trench technology for low RDS (ON) extending battery life
- Small outline (2 x 2 mm) for maximum circuit board utilization
- Gate diodes for ESD protection
- -55 to 150°C Operating junction temperature range
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.06ohm
Transistor Case Style
SOT-363
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
4.2A
On Resistance Rds(on)
0.047ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1W
Power Dissipation
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate