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NTR1P02T1G
Power MOSFET, P Channel, 20 V, 1 A, 0.18 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.093 |
| 25+ | $0.093 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTR1P02T1G
Newark Part No.10N9587
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1A
On Resistance Rds(on)0.148ohm
Drain Source On State Resistance0.18ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd400mW
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max1.9V
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Alternatives for NTR1P02T1G
1 Product Found
Product Overview
The NTR1P02T1G is a P-channel Power MOSFET features ultra-low on-resistance provides higher efficiency and extends battery life.
Applications
Communications & Networking, Computers & Computer Peripherals
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.148ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
400mW
Gate Source Threshold Voltage Max
1.9V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
1A
Drain Source On State Resistance
0.18ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-23
Power Dissipation
400mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability