Print Page
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
3,882 In Stock
Need more?
479 Delivery in 1-3 Business Days(US stock)
3403 Delivery in 2-4 Business Days(UK stock)
Order before 9pm
| Quantity | Price |
|---|---|
| 1+ | $5.090 |
| 10+ | $3.340 |
| 25+ | $3.010 |
| 50+ | $2.670 |
| 100+ | $2.340 |
| 250+ | $2.190 |
| 500+ | $2.050 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$5.09
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVD5117PLT4G-VF01
Newark Part No.54AH9518
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id61A
On Resistance Rds(on)0.012ohm
Drain Source On State Resistance0.012ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd118W
Power Dissipation118W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead (27-Jun-2024)
Product Overview
NVD5117PLT4G-VF01 is a single, P-channel, power MOSFET.
- Low RDS(on) to minimize conduction losses
- High current capability, avalanche energy specified
- AEC-Q101 qualified
- Continuous drain current is -61A at (TC = 25°C)
- Drain-to-source breakdown voltage is -60V minimum at (VGS = 0V, ID = -250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Drain-to-source on resistance is 12mohm typical at (VGS = -10V, ID = -29A)
- Turn-on delay time is 22ns typical at (VGS = -4.5V, VDS = -48V, ID = -29A, RG = 2.5 ohm)
- Rise time is 195ns typical at (VGS = -4.5V, VDS = -48V, ID = -29A, RG = 2.5 ohm)
- Junction temperature range from -55°C to 175°C, DPAK package
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.012ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
118W
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (27-Jun-2024)
Transistor Polarity
P Channel
Continuous Drain Current Id
61A
Drain Source On State Resistance
0.012ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
118W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Alternatives for NVD5117PLT4G-VF01
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate