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NXH006P120MNF2PTG
Silicon Carbide MOSFET, Half Bridge, N Channel, 304 A, 1.2 kV, 5480 µohm, Module
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ManufacturerONSEMI
Manufacturer Part NoNXH006P120MNF2PTG
Newark Part No.50AJ5927
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $295.420 |
| 5+ | $286.390 |
| 10+ | $277.340 |
Price for:Each
Minimum: 1
Multiple: 1
$295.42
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH006P120MNF2PTG
Newark Part No.50AJ5927
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id304A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.00548ohm
Drain Source On State Resistance5480µohm
Transistor Case StyleModule
No. of Pins36Pins
Power Dissipation Pd950W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.83V
Power Dissipation950W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
5480µohm
No. of Pins
36Pins
Rds(on) Test Voltage
20V
Power Dissipation
950W
Product Range
-
Transistor Polarity
N Channel
Continuous Drain Current Id
304A
On Resistance Rds(on)
0.00548ohm
Transistor Case Style
Module
Power Dissipation Pd
950W
Gate Source Threshold Voltage Max
2.83V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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Product Compliance Certificate