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NXH350N100H4Q2F2S1G
IGBT Module, Four Pack, 303 A, 1.63 V, 592 W, 175 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNXH350N100H4Q2F2S1G
Newark Part No.29AK2762
Product RangeEliteSiC Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $224.000 |
| 5+ | $217.340 |
| 10+ | $210.690 |
| 25+ | $204.010 |
Price for:Each
Minimum: 1
Multiple: 1
$224.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH350N100H4Q2F2S1G
Newark Part No.29AK2762
Product RangeEliteSiC Series
Technical Datasheet
IGBT ConfigurationFour Pack
Continuous Collector Current303A
Collector Emitter Saturation Voltage1.63V
Power Dissipation592W
Operating Temperature Max175°C
Transistor Case StyleModule
IGBT TerminationSolder
Collector Emitter Voltage Max1kV
IGBT TechnologyIGBT [Trench/Field Stop]
Transistor MountingPanel
Product RangeEliteSiC Series
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
IGBT Configuration
Four Pack
Collector Emitter Saturation Voltage
1.63V
Operating Temperature Max
175°C
IGBT Termination
Solder
IGBT Technology
IGBT [Trench/Field Stop]
Product Range
EliteSiC Series
Continuous Collector Current
303A
Power Dissipation
592W
Transistor Case Style
Module
Collector Emitter Voltage Max
1kV
Transistor Mounting
Panel
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate