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BSM400D12P3G002
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 400 A, 1.2 kV, Module
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| Quantity | Price |
|---|---|
| 1+ | $1,730.550 |
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$1,730.55
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Product Information
ManufacturerROHM
Manufacturer Part NoBSM400D12P3G002
Newark Part No.88AH6169
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Transistor PolarityDual N Channel
Channel TypeDual N Channel
Continuous Drain Current Id400A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
On Resistance Rds(on)-
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage-
Power Dissipation Pd1.57kW
Gate Source Threshold Voltage Max5.6V
Power Dissipation1.57kW
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
-
No. of Pins
-
Power Dissipation Pd
1.57kW
Power Dissipation
1.57kW
Product Range
-
Transistor Polarity
Dual N Channel
Continuous Drain Current Id
400A
Drain Source On State Resistance
-
Transistor Case Style
Module
Rds(on) Test Voltage
-
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability