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QS6K1TR

Name: Dual MOSFET, N Channel, 30 V, 1 A, 0.364 ohm
Brand: ROHM
SKU: 74M4156
Availability: InStock

Dual MOSFET, N Channel, 30 V, 1 A, 0.364 ohm

Date/Lot Code

Image is for illustrative purposes only. Please refer to product description.

ManufacturerROHM

Manufacturer Part NoQS6K1TR

Newark Part No.74M4156

Technical Datasheet

Data Sheet

See all Technical Docs

2,664 In Stock

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Quantity	Price
1+	$1.310
10+	$0.811
25+	$0.729
50+	$0.647
100+	$0.565
250+	$0.512
500+	$0.458
1000+	$0.413

Price for:Each (Supplied on Cut Tape)

Minimum: 5

Multiple: 5

$6.55

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Product Information

ManufacturerROHM

Manufacturer Part NoQS6K1TR

Newark Part No.74M4156

Technical Datasheet

Data Sheet

Channel TypeN Channel

Drain Source Voltage Vds N Channel30V

Continuous Drain Current Id1A

Drain Source Voltage Vds30V

Drain Source Voltage Vds P Channel-

Continuous Drain Current Id N Channel1A

Continuous Drain Current Id P Channel-

Drain Source On State Resistance N Channel0.364ohm

Drain Source On State Resistance P Channel-

Transistor Case StyleTSMT

No. of Pins6Pins

Power Dissipation N Channel900mW

Power Dissipation P Channel-

Operating Temperature Max150°C

Product Range-

Qualification-

MSLMSL 1 - Unlimited

SVHCNo SVHC (23-Jan-2024)

Product Overview

The QS6K1TR is a dual N-channel Complex MOSFET designed as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. It is designed for coin processing machines, portable data terminal, handy and bench type digital multi-meter, PLC, DVR/DVS, POS, electric bike, smart meter, surveillance camera, X-ray inspection machine for security, surveillance camera for network, intercom/baby monitor, fingerprint authentication device, machine vision camera for industrial and display for EMS applications.

Low ON-resistance
Small and surface-mount package
Built-in G-S protection diode
Fast switching performance

Applications

Industrial, Embedded Design & Development, Motor Drive & Control, Alternative Energy, Power Management

Technical Specifications

Channel Type

N Channel

Continuous Drain Current Id

Drain Source Voltage Vds P Channel

Continuous Drain Current Id P Channel

Drain Source On State Resistance P Channel

No. of Pins

6Pins

Power Dissipation P Channel

Product Range

MSL

MSL 1 - Unlimited

Drain Source Voltage Vds N Channel

30V

Drain Source Voltage Vds

30V

Continuous Drain Current Id N Channel

Drain Source On State Resistance N Channel

0.364ohm

Transistor Case Style

TSMT

Power Dissipation N Channel

900mW

Operating Temperature Max

150°C

Qualification

SVHC

No SVHC (23-Jan-2024)

Technical Docs (1)

Technical Data Sheet EN

Alternatives for QS6K1TR

1 Product Found

Associated Products

3 Products Found

Legislation and Environmental

US ECCN:EAR99

EU ECCN:Unknown

RoHS Compliant:Yes

RoHS

RoHS Phthalates Compliant:Yes