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R6004ENJTL
MOSFET, N-CH, 600V, 4A, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerROHM
Manufacturer Part NoR6004ENJTLCopy
Manufacturer Standard Lead Time23 weeks
Newark Part No.99Y2382
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 23 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.920 |
| 10+ | $1.860 |
| 25+ | $1.660 |
| 50+ | $1.460 |
| 100+ | $1.270 |
| 300+ | $1.180 |
| 500+ | $1.130 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.92
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoR6004ENJTLCopy
Manufacturer Standard Lead Time23 weeks
Newark Part No.99Y2382
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id4A
Drain Source On State Resistance0.98ohm
On Resistance Rds(on)0.9ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd58W
Gate Source Threshold Voltage Max4V
Power Dissipation58W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (23-Jan-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.98ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
4A
On Resistance Rds(on)
0.9ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
58W
Power Dissipation
58W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (23-Jan-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate