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RJ1P10BATTL1
Power MOSFET, P Channel, 100 V, 105 A, 0.0119 ohm, TO-263AB (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerROHM
Manufacturer Part NoRJ1P10BATTL1Copy
Manufacturer Standard Lead Time21 weeks
Newark Part No.
Re-Reel91AM7566RL
Cut Tape91AM7566
Your Part Number
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $9.160 | $9.16 |
| Total Price | $9.16 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $9.160 |
| 50+ | $6.890 |
| 100+ | $5.380 |
| 250+ | $5.130 |
| 500+ | $4.860 |
| 1000+ | $4.600 |
| 2500+ | $4.520 |
| 5000+ | $4.420 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoRJ1P10BATTL1Copy
Manufacturer Standard Lead Time21 weeks
Newark Part No.
Re-Reel91AM7566RL
Cut Tape91AM7566
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id105A
Drain Source On State Resistance0.0119ohm
Transistor Case StyleTO-263AB (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation201W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
105A
Transistor Case Style
TO-263AB (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
201W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0119ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate