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RJP020N06T100
Power MOSFET, N Channel, 60 V, 2 A, 0.165 ohm, SOT-89, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.200 |
| 10+ | $0.925 |
| 25+ | $0.866 |
| 50+ | $0.808 |
| 100+ | $0.750 |
| 250+ | $0.691 |
| 500+ | $0.604 |
| 1000+ | $0.488 |
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Multiple: 1
$1.20
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Product Information
ManufacturerROHM
Manufacturer Part NoRJP020N06T100
Newark Part No.84R7502
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2A
Drain Source On State Resistance0.165ohm
On Resistance Rds(on)0.165ohm
Transistor Case StyleSOT-89
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd500mW
Gate Source Threshold Voltage Max4.5V
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (23-Jan-2024)
Product Overview
The RJP020N06T100 is a N-channel silicon MOSFET offers 60V drain source voltage and ±2A continuous drain current. It is suitable for use in switching applications.
- Low ON-resistance
- 2.5V Low voltage drive
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.165ohm
Transistor Case Style
SOT-89
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
2A
On Resistance Rds(on)
0.165ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
500mW
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (23-Jan-2024)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability