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ManufacturerROHM
Manufacturer Part NoRJP020N06T100
Newark Part No.
Re-Reel84R7502
Cut Tape84R7502
Your Part Number
Technical Datasheet
1,065 In Stock
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Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.910 |
| 10+ | $1.160 |
| 25+ | $1.050 |
| 50+ | $0.936 |
| 100+ | $0.825 |
| 250+ | $0.747 |
| 500+ | $0.622 |
| 1000+ | $0.487 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoRJP020N06T100
Newark Part No.
Re-Reel84R7502
Cut Tape84R7502
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2A
Drain Source On State Resistance0.165ohm
On Resistance Rds(on)0.165ohm
Transistor Case StyleSOT-89
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd500mW
Gate Source Threshold Voltage Max4.5V
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (23-Jan-2024)
Product Overview
The RJP020N06T100 is a N-channel silicon MOSFET offers 60V drain source voltage and ±2A continuous drain current. It is suitable for use in switching applications.
- Low ON-resistance
- 2.5V Low voltage drive
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.165ohm
Transistor Case Style
SOT-89
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
2A
On Resistance Rds(on)
0.165ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
500mW
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (23-Jan-2024)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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